TOKYO — Toshiba Corp. has developed a one-transistor, no-capacitor cell structure that it claims solves the difficulties encountered in producing DRAMs in sub-0.1-micron process technology. The ...

Presented at the 2020 International Electron Devices Meeting, the DRAM cells in this 2T0C (2 transistor 0 capacitor) configuration show a retention time longer than 400s for different cell dimensions ...

One-transistor, one-capacitor (1T-1C) DRAM cells have been commercially implemented since at least 1999. They save die area compared to conventional 6-T DRAM cells, use less power, yield better ...

Imec has come up with a novel DRAM cell architecture that implements two indium-gallium-zinc-oxide thin-film transistors (IGZO-TFTs) and no storage capacitor. DRAM cells in this 2T0C (2 transistor 0 ...

DRAM is based on a one-transistor, one-capacitor (1T1C) cell structure. The cells are arranged in a rectangular, grid-like array. In simple terms, a voltage is applied to the transistor in the DRAM ...

Tokyo – Toshiba Corp. has developed a new cell structure for embedded DRAM on silicon-on-insulator wafers that takes advantage of SOI's specific characteristics. The cell will be an essential ...

While a DRAM bit cell requires only a single transistor and capacitor, an SRAM cell uses six n- and p-channel transistors, resulting in a 10:1 density advantage for DRAM.

A conventional DRAM cell consists of one transistor and one capacitor. But when a DRAM is processed at below 0.1 micron, this structure becomes a bottleneck. Even if the transistor shrinks, the ...

Imec has come up with a novel DRAM cell architecture that implements two indium-gallium-zinc-oxide thin-film transistors (IGZO-TFTs) and no storage capacitor. DRAM cells in this 2T0C (2 transistor 0 ...

LEUVEN, Belgium, Dec. 15, 2020 /PRNewswire/ -- This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and inn ...

imec, the research and innovation hub in nanoelectronics, has presented a dynamic random-access memory (DRAM) cell architecture that implements two indium-gallium-zinc-oxide thin-film transistors ...