While hafnium oxide (HfO 2) and zirconium oxide (ZrO 2) are well-known high-k materials, recent research has expanded the list to include tantalum oxide (Ta 2 O 5), aluminum oxide (Al 2 O 3), and ...

Epitaxial SrTiO 3 films with dielectric constants exceeding 25,000. Proceedings of the National Academy of Sciences , 2022; 119 (23) DOI: 10.1073/pnas.2202189119 Cite This Page : ...

Silicon transistors already have confronted this issue, which led to the introduction of high-k gate dielectric materials. As the dielectric constant (k) increases, the same capacitance is achieved ...

The dielectric constant of silicon is 11.9, much higher than that of air (1), and as a result, terahertz waves are reflected at the interface between silicon and air.

Moreover, EOT reduction is achieved in part by reducing the thickness of the SiO 2 portion of the SiO 2 /high-k dielectric stack comprising the gate dielectric. With a thinner interfacial oxide, ...

A breakthrough silicon oxide technology for high-density, next-generation computer memory is one step closer to mass production, thanks to a refinement that will allow manufacturers to fabricate ...

Rice University's breakthrough silicon oxide technology for high-density, next-generation computer memory is one step closer to mass production, thanks to a refinement that will allow ...