One approach to boost gate capacitance without decreasing the thickness of gate insulators or gate dielectrics entails the use of insulating materials with a high dielectric constant (κ), such as ...

The material provides exceptionally high dielectric constant compared with currently existing forms of hafnium oxide, which is already a key material in the electronics industry. Hafnium oxide forms ...

Researchers solve mystery surrounding dielectric properties of unique metal oxide Date: June 13, 2022 Source: University of Minnesota Summary: A research team has solved a longstanding mystery ...

In semiconductors, the dielectric constant plays an important role by providing effective “screening,” or protection, of the conducting electrons from other charged defects in the material.

Scientists at the Brookhaven National Laboratory in New York, the Massachusetts Institute of Technology, Los Alomos National Laboratory and the University of Toronto, have discovered a compound oxide ...

High-k dielectrics are primarily utilized in the gate dielectric layer of metal-oxide-semiconductor field-effect transistors (MOSFETs). Their high dielectric constant allows for a thicker gate oxide ...

Just as circuit metallization must evolve to manage resistance as features shrink, so must the dielectric half of the interconnect stack. For quite some time, manufacturers have needed a dielectric ...

Epitaxially-grown molybdenum oxide advances as a bulk-like 2D dielectric layer Date: November 13, 2019 Source: Seoul National University Summary: Scalable 2D-type MoO3 nanosheets were synthesized ...

An Italian research group has fabricated 110 cm² perovskite solar module with an inverted configuration and a hole transport layer that uses nickel oxide instead of commonly utilized poly ...

New research solved a longstanding mystery surrounding strontium titanate, an unusual metal oxide that can be an insulator, a semiconductor, or a metal. The research provides insight for future ...