Samsung Electronics is encountering delays in the development of its next-generation 1c DRAM chips, according to sources ...

FMC specializes in memory that uses ferroelectric hafnium oxide (HfO₂) to create DRAM+ that retains data without power. The technology replaces the typical capacitor in DRAM wit ...

San Jose, California, May 13, 2024 – NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell ...