A conventional DRAM cell consists of one transistor and one capacitor. But when a DRAM is processed at below 0.1 micron, this structure becomes a bottleneck. Even if the transistor shrinks, the ...

Scaling traditional 1T1C (one transistor one capacitor) DRAM memories beyond 32Gb die density faces two major challenges. First, difficulties in Si-based array transistor scaling make it challenging ...

One-transistor, one-capacitor (1T-1C) DRAM cells have been commercially implemented since at least 1999. They save die area compared to conventional 6-T DRAM cells, use less power, yield better ...

The new DRAM cell does not have a capacitor like a conventional DRAM. Instead, it uses the floating-body effect of the SOI wafer, which causes excessive holes to accumulate in the body under the gate ...

Imec has come up with a novel DRAM cell architecture that implements two indium-gallium-zinc-oxide thin-film transistors (IGZO-TFTs) and no storage capacitor. DRAM cells in this 2T0C (2 transistor 0 ...

DRAM is based on a one-transistor, one-capacitor (1T1C) cell structure. The cells are arranged in a rectangular, grid-like array. In simple terms, a voltage is applied to the transistor in the DRAM ...

How does DRAM work? But even though the 1 transistor 1 capacitor structure is very simple, DRAM had its teething troubles. In fact, the first five DRAM generations that Intel introduced had a very low ...

Scaling traditional 1T1C (one transistor one capacitor) DRAM memories beyond 32Gb die density faces two major challenges. First, difficulties in Si-based array transistor scaling make it challenging ...

The floating-body cell (FBC) is formed on a silicon-on-insulator (SOI) wafer and consists of one MOSFET, whose body is electrically floating. Making use of the floating body, a charge (holes for nMOS) ...

Imec has come up with a novel DRAM cell architecture that implements two indium-gallium-zinc-oxide thin-film transistors (IGZO-TFTs) and no storage capacitor. DRAM cells in this 2T0C (2 transistor 0 ...

DRAM cells in this 2T0C (2 transistor 0 capacitor) configuration show a retention time longer than 400s for different cell dimensions – significantly reducing the memory's refresh rate and power ...