To understand what this means, lets look at the DRAM structure. DRAM cells are laid out in a regular rectangular, grid-like pattern to facilitate their control and access via wordlines and bitlines ...

The company filed all relevant patent stuff with the United States Patent Application Publication on April 6, 2023, for what it's calling a 3D NAND-like DRAM cell array structure for memory.

Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with 230 layers, which is eight times today's DRAM density. NEO Semiconductor said its cell array structure is based on ...

3D X-DRAM employs a 3D NAND-like DRAM cell array structure based on capacitor-less floating body cell technology, NEO Semiconductor explains. 3D X-DRAM chips can be manufactured with the same ...

The new 4F Square design uses vertical stacking to reduce DRAM cells by around 30% from today's standard 6F Square DRAM cell structure. 4F Square is not only more horizontally compact, but more ...

Neo’s new 3D X-DRAM technology uses a 3D NAND-like DRAM cell array structure. It is reportedly cheap to make and easy to produce, yet features substantially greater memory capacity compared to ...

NEO Semiconductor unveils a breakthrough 1T1C-type 3D X-DRAM cell—delivering up to 512 Gb density, 10ns fast read/write speed, and over 450 seconds of data retention—optimized for high ...

NEO Semiconductor's 3D X-DRAM™ is a first-of-its-kind 3D NAND-like DRAM cell array structure based on floating body cell technology. It can be manufactured using today's mature 3D NAND-like process.

NEO Semiconductor's 3D X-DRAM™, a pioneering 3D NAND-like DRAM cell array structure, is based on capacitor-less floating body cell technology.

Based on NEO’s existing 3D X-DRAM technology, the new cells are advertised as being able to hold 512 Gb (64 GB) on a single module; at least 10x more than any modules currently commercially ...