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FRÖHLICH'S theory of dielectrics predicts an increase in the electric strength as the thickness of the dielectric specimen approaches the electronic mean free path. This prediction has been ...
Researchers at Fudan University recently prepared a 2D perovskite oxide with high-κ that can be integrated with different 2D channel materials. Their paper, published in Nature Electronics, could ...
Well, the Peking team has used bismuth in both the semiconductor and high-dielectric oxide. It's a post-transitional metal, which also applies to lead, gallium, indium and tin, among others.
The material provides exceptionally high dielectric constant compared with currently existing forms of hafnium oxide, which is already a key material in the electronics industry. Hafnium oxide forms ...
Giant flakes make graphene oxide gel: Discovery could boost metamaterials, high-strength fibers Date: October 23, 2011 Source: Rice University Summary: Slices of graphene oxide in a solution ...
Researchers at the University of Exeter have developed an innovative technique that could help create the next generation of everyday flexible electronics.
Article Title A single-crystalline native dielectric for two-dimensional semiconductors with an equivalent oxide thickness below 0.5 nm ...
Dielectric capacitors have become critical components in advanced electronic systems because they have both a high-power density and an ultrafast charge-discharge mechanism. However, as advanced ...
Nature Scientific Reports – Graphene Oxide Dielectric Permittivity at GHz and Its Applications for Wireless Humidity Sensing The relative dielectric permittivity of graphene oxide (GO), both its real ...
In coating-based resistive heating systems applied on an electrically conductive substrate, an intermediary dielectric layer is required to minimize or eliminate leakage of current from the heating ...
Most EOS and ESD subjected failures occur mainly due to thermal damage or burnt metallization, oxide or dielectric breakdown, contact damage, or junction damage.