References [1] Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm. Nature Electronics (2019).

A new test structure for a stacked capacitor DRAM cell transistors with a diagonal active-area was developed to analyze the leakage current characteristics of the cell transistors. The leakage current ...

One-transistor dynamic random-access memory (1T DRAM) offers significant advantages in fabrication process and scalability over the traditional one-transistor one-capacitor (1T-1C) DRAM due to its ...

Actress Jo Hyejeong is returning to drama after three years with 'Yumi's Cells Season 3.' On the 30th, a representative from her agency BH Entertainment stated to OSEN, "Actress Jo Hyejeong will ...