This paper designs a drive circuit of MOSFET for ultrasonic power. The requirements of high-speed drive circuit of MOSFET are presented based on the turn-on and turn-off processes. The design and ...

AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0milliohm (typ.) in a compact ...

ROHM Semiconductor has introduced the BM6GD11BFJ-LB, an isolated gate driver IC developed specifically for driving high-voltage GaN HEMTs. This device enables stable operation under high-speed, ...

SiC MOSFET can operate at a junction temperature of 200-250 °C due to its improved material properties and thermal stability. However, successful realization of SiC MOSFET based high-temperature (HT) ...