Nexperia has announced the expansion of its bipolar junction transistor (BJTs) portfolio by introducing 12 new MJD-style BJTs in clip-bonded FlatPower (CFP15B) packaging.

Integrated phononic waveguide on thin-film lithium niobate on diamond; aZnMIm resist for EUV lithography; TMDC multi-channel GAA-FET architectures at sub-1nm; HW trojans detection using GNNs; agentic ...

EPC Space has announced a radiation-hardened 300V GaN FET for high-voltage, high-power space applications, including next-generation satellite power plants and electric propulsion systems.

A MOBILE (monostable-bistable transition logic element), employing two n-type negative differential resistance devices connected in series, is a functional logic gate with the advantages of multiple ...

A microtunnel diode load for a normally off enhancement mode gallium arsenide field effect transistor provides a compact inverter circuit of fast switching speed and low power consumption. Level ...

Two red fluorophores (TPABTPA and TPABCHO) with hybridized local and charge-transfer properties were systematically studied. TPABTPA and TPABCHO enabled nondoped organic light-emitting diodes (OLEDs) ...