The current evaluation on negative capacitance ferroelectric MOSFET (NC-FeFET) mostly reports device-level current/capacitance-voltage prediction and approaches with ease of integration in SPICE for ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

In this brief, the conformal mapping was used to model the fringe capacitance in a nanoplate FET. The proposed model is more accurate than the use of a previous model compared to simulation results, ...

2.1.4 SiC MOSFET For the SiC MOSFET, the parasitic capacitance and inductance need to be considered for more accurate modeling. As shown in Figure 7, RG R G is the turn-on resistance, and CGD C G D ...

We present a first-principles computational model to calculate the interfacial capacitance of low-dimensional materials in contact with a bulk substrate. The model is based on density functional ...

The new model considering parasitic capacitance is given in Section 2. The control method based on this and the definition of the light load is discussed in Section 3.

Switching the polarization of the FE decreases its charge, leading to a corresponding increase in charge at the DE near the gate. Relative to a conventional MOSFET, this so-called “negative ...

There have been ongoing efforts to develop solutions to the limitation of CMOS FET technology, including negative capacitance FETs (NC-FETs).

Standard model limitations Prediction of a discrete MOSFET’s dynamic performance (especially switching and EMC) requires a model that simulates the static and dynamic characteristics across the full ...