The low figure of merit and enhanced packaging of Toshiba’s new MOSFETs contribute to higher efficiency in high-voltage power ...

Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

Transmission & Distribution World provides electric utility professionals with information about the latest technologies & solutions in the energy industry.

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection to the market.

In this study, we have realized a monolithic silicon carbide (SiC) power integrated circuit (IC) integrating a 1.2 kV-class trench gate vertical metal-oxide-semiconductor field-effect transistor ...

With many midband spectrum reallocations for fifth-generation (5G) wireless communications causing a congested spectrum, flexibility in high-power transmitter system operating frequency is needed ...

In this PowerUp CircuitLab episode, we explore current measurement techniques on a hair dryer with both resistive and inductive components. From invasive methods like ammeters and shunt resistors to ...

Switching-induced stress waves are unique mechanical signals generated by electrical transients during the switching processes of power devices. These processes are typically controlled using pulsed ...