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This letter presents the properties of nMOS junctionless nanowire transistors (JNTs) under cryogenic operation. Experimental results of drain current, subthreshold slope, maximum transconductance at ...
We evaluate the use of thick buried oxide (BOX) of fully depleted silicon-on-insulator (FD-SOI) transistors for total ionizing dose (TID) measurements in a radiotherapy application. The devices were ...