Compound Semiconductor™ is an Angel Business Communications publication.

Until recently, most studies on subgap states focused on amorphous IGZO, as sufficiently large single-crystal IGZO (sc-IGZO) ...

This valuable manuscript provides convincing evidence that BK and CaV1.3 channels can co-localize as ensembles early in the biosynthetic pathway, including in the ER and Golgi. The findings, supported ...

The Hi-MO X10 modules are built based on LONGi's revolutionary HPBC 2.0 cell technology and feature a unique bypass diode structure. In practical application scenarios, modules are often shaded by ...

The Hi-MO X10 modules are built based on LONGi's revolutionary HPBC 2.0 cell technology and feature a unique bypass diode structure. In practical application scenarios, modules are often shaded by ...

XI'AN, China, June 25, 2025 /PRNewswire/ -- Recently, LONGi's Hi-MO X10 series products have won the Class A certification for shadow resistance from Germany's TÜV Rheinland. As a world-renowned ...

In this work, high-performance GaN vertical Schottky barrier diodes (SBDs) are successfully fabricated on the GaN-on-GaN substrate by using the self-alignment trench structure and argon (Ar) ion ...

We proposed a new model for gated-anode diodes (GADs) based on gallium nitride (GaN) high-electron mobility transistors (HEMTs) to optimize the device structure toward efficient microwave ...

Correction to “2D Hole-Arrayed Double-Anode Structure Exciting Surface Plasmon Polaritons for Enhancing Outcoupling Efficiency of Organic Light-Emitting Diodes on Silicon Wafers (OLEDoS)” ...

The Hi-MO X10 modules are built based on LONGi's revolutionary HPBC 2.0 cell technology and feature a unique bypass diode structure. In practical application scenarios, modules are often shaded by ...