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The driver-stage envelope-injection power amplifier (EIPA) consisting of the wideband linear amplifier with the envelope amplitude and phase shaping functions is proposed. This SiGe BiCMOS EIPA is ...
A single-stage stacked field-effect transistor (FET) linear power amplifier (PA) is demonstrated using 0.28-¿m 2.5-V standard I/O FETs in a 0.13-¿m silicon-on-insulator (SOI) CMOS technology. To ...
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