A dynamic compact model for ferroelectric (FE) capacitance is presented in this letter. The model is derived based on the essential physics of multidomain variations and switching dynamics beyond a ...

A research team led by Profs. Chen Deyong and Wang Junbo from the Aerospace Information Research Institute (AIR) of the ...

The SiC MOSFETs benefit from improvements to the component structure, based on the original double-trench design. Therefore, it achieves up to 40% lower on-resistance with notably higher robustness ...

Renesas launches the Gen IV Plus platform with three new high-voltage 650-V GaN FETs for AI data centers and server power ...

The updated Class 12th Physics syllabus for the academic year 2025-26 has been released by the Rajasthan Board on its ...

World-first: Terra Quantum builds the first foundry-grade NC-FET with standard CMOS materials. The NC-FET marks a defining moment ...

When light strikes the photodiode’s active region, current flows from cathode to anode. Ideally, this entire photocurrent ...

Coreless transformers (CTs) in solid state isolators (SSIs) rely on inductive coupling to transfer information and power ...

Global Film Capacitor Market is valued approximately at USD 4.84 billion in 2023 and is anticipated to grow with a healthy growth rate of more than 3.73% over the forecast period 2024-2032. Request To ...

Nexperia introduced the industry’s first ESD diodes designed to protect 48 V automotive data communications networks against ...

As electronic devices become more advanced, integrating complex logic into a single component becomes essential. Enter AND6, ...

This article investigates the effects of airgaps between different parts of magnetic cores on the parasitic capacitance of magnetic components, which was excluded by previous research. According to ...