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512 Mb Mobile SDRAM with on-chip error-correction code (ECC), which supports either single or double data rate and operates on a 1.8 V power supply, is developed. The ECC circuit is optimized with ...
This paper presents the results of DDR3 SDRAM stuck/weak bit studies from HI, TID, Neutron, Proton and temperature tests. The objectives include identifying reasonable engineering solutions to either ...
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