The design is expected to deliver improvements in performance, data transfer rates, and energy efficiency. Both Samsung Electronics and SK hynix are positioning 4F² DRAM as a transitional step toward ...

Cost challenges loom over 3D DRAM transition In tandem, SK Hynix is investing in 3D DRAM, a transformative technology that vertically stacks memory cells to overcome planar scaling limitations.

The new DRAM cell design is a two-transistor, no-capacitor (2t0c) design that utilises two thin-film transistors, each with an IGZO channel, to store data. The IGZO material is chosen for its wide ...

One-transistor dynamic random-access memory (1T DRAM) offers significant advantages in fabrication process and scalability over the traditional one-transistor one-capacitor (1T-1C) DRAM due to its ...

How does DRAM work? But even though the 1 transistor 1 capacitor structure is very simple, DRAM had its teething troubles. In fact, the first five DRAM generations that Intel introduced had a very low ...

DRAM vs SRAM There are two main classifications of primary memory — DRAM (Dynamic Random Access Memory) and SRAM (Static Random Access Memory). While we have learned what DRAM is and how it works, how ...

Researchers developed a new capacitorless DRAM technology that eliminates the need for a cell capacitor, increases memory density via 3D stacking of vertical transistors, and was tested through ...

In this work, we demonstrated capacitor-less 4F2 2-terminal InGaAs npn junction DRAM through careful device design. Using epitaxially grown InGaAs which have a ...