This paper presents a 15kV silicon carbide (SiC) MOSFET gate drive, which features high common-mode (CM) noise immunity, small size, light weight, and robust yet flexible protection functions. To ...

ROHM Semiconductor has introduced the BM6GD11BFJ-LB, an isolated gate driver IC developed specifically for driving high-voltage GaN HEMTs. This device enables stable operation under high-speed, ...

This article presents the design and optimization of a suitable topology for an isolated dc-dc auxiliary power supply with high isolation voltage and low coupling capacitance. The converter consists ...