Integrating the Schottky diode into a GaN transistor helps boost power-system efficiency by reducing dead-time losses.

Turn broken electronics into hands-on lessons. Master soldering while embracing the DIY mindset of learning by doing.

Operation of the JFET protection circuit The JFET input protection in Figure 3 shows the circuit operation under fault condition. This example applies a +50 V input fault to an op amp with ±18 V power ...

Using a resonant discharge power stage, they employ a ground-referenced GaN FET driven by LMG1020 gate driver. The GaN FET's ultrafast switching enables rapid discharge of a charged capacitor through ...

EPC has introduced three evaluation boards - EPC9179, EPC9181, and EPC9180 - featuring pulse current laser drivers of 75 A, 125 A, and 231 A , showcasing EPC’s AEC-Q101 GaN FETs. These FETs; EPC2252, ...

Last time, we’ve looked over FET basics, details, nuances and caveats. Basics aren’t all there is to FETs, however – let’s go through real-world uses, in all their wonderful… ...

Unlike diodes, most FETs have a positive thermal coefficient – as more current flows through a FET and its temperature increases, its resistance increases too, which results in paralleled FETs ...

Central compares this with a 350mA JFET constant current diode with a limiting voltage of 1.9V that reaches its nominal current at 5V. “Using this data, it can be determined that the mosfet-based ...

IGBTs cannot do this and require a parallel diode, but MOSFETs and JFETs in silicon and SiC can conduct in either direction through their channel under the control of the gate.