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Abstract: The corruption of floating gate bits due to high-energy protons is analyzed in 41-nm single level NAND Flash memories. Proton-induced upsets at low doses are not negligible in deeply-scaled ...
The NAND gate is designed using DVS and MTCMOS technique gives least power consumption. All the simulations have been performed on Tanner EDA Tool version 14.1. The proposed technique reduces the ...
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