This letter reports the bias temperature instabilities (BTI) of 4H-SiC CMOS devices with different gate lengths (L) and gate widths (W) for integrated circuits at 400 °C for the first time. The result ...

A buried-channel (BC) MOSFET model for DC, transient and small-signal circuit simulation, which has been incorporated into SPICE 3B1, is presented. The model includes all of the modes of operation ...

Beckhoff has expanded its portfolio of EtherCAT and EtherCAT P Box products with modules that offer additional hexadecimal ...