A silicon carbide split-gate MOSFET (SG-MOSFET) is proposed in this paper, which features a Schottky barrier diode embedded above the JFET region between the split gates. Therefore, the proposed ...

It is seen as a breakthrough that could push solar cell efficiency beyond 30%, significantly outperforming current technologies ...

As the silicon carbide (SiC) power metal–oxide–semiconductor field-effect transistor (MOSFET) develops, increasing efforts are placed on ac bias temperature instability (AC BTI). It was reported that ...