In this work, the study of the single event effects (SEEs) in capacitor-less one-transistor dynamic random access memory (1T-DRAM) based on an indium gallium arsenide on insulator (InGaAs-OI) ...

Quantum confinement in 3-D device structure together with the newly employed materials like silicon-germanium (SiGe) in advanced technologies (e.g., FinFET, nanowire, nanosheets, etc.) makes ...